晶体管
MMBT2222AT3
Transistor
MMBT2222AT3 为Transistor，采用 SOT323 封装。
SOT323 符合 RoHS 无卤 现货供应
封装 — SOT323
产品特性
- Capable of 200 mWatts of Power Dissipation
- Operating and Storage Junction Temperatures: 55°C to 150°C
- Surface Mount SOT323 Package
- Epoxy Meets UL 94 V0 Flammability Rating
- 符合 RoHS / Green EMC
关键规格
Product
MMBT2222AT3
Package
SOT323
Polarity
NPN
Pc
(W)
0.2
IC
(A)(Max.)
0.6
BVCEO
(V)(Min.)
40
BVCBO
(V)(Min.)
75
BVEBO
(V)(Min.)
6
VCE(sat)
(V)(Max.)
0.3
hFE
35~300